JPH0377655B2 - - Google Patents

Info

Publication number
JPH0377655B2
JPH0377655B2 JP57042456A JP4245682A JPH0377655B2 JP H0377655 B2 JPH0377655 B2 JP H0377655B2 JP 57042456 A JP57042456 A JP 57042456A JP 4245682 A JP4245682 A JP 4245682A JP H0377655 B2 JPH0377655 B2 JP H0377655B2
Authority
JP
Japan
Prior art keywords
induction heating
reaction tube
substrate
processed
frequency power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57042456A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58158915A (ja
Inventor
Takashi Ito
Ichiro Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57042456A priority Critical patent/JPS58158915A/ja
Priority to DE8383301464T priority patent/DE3380265D1/de
Priority to US06/476,551 priority patent/US4486461A/en
Priority to EP83301464A priority patent/EP0089242B1/en
Publication of JPS58158915A publication Critical patent/JPS58158915A/ja
Publication of JPH0377655B2 publication Critical patent/JPH0377655B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/005—Oxydation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
JP57042456A 1982-03-16 1982-03-16 薄膜生成装置 Granted JPS58158915A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57042456A JPS58158915A (ja) 1982-03-16 1982-03-16 薄膜生成装置
DE8383301464T DE3380265D1 (en) 1982-03-16 1983-03-16 Method and apparatus for gas phase treatment of substrates
US06/476,551 US4486461A (en) 1982-03-16 1983-03-16 Method and apparatus for gas phase treating substrates
EP83301464A EP0089242B1 (en) 1982-03-16 1983-03-16 Method and apparatus for gas phase treatment of substrates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57042456A JPS58158915A (ja) 1982-03-16 1982-03-16 薄膜生成装置

Publications (2)

Publication Number Publication Date
JPS58158915A JPS58158915A (ja) 1983-09-21
JPH0377655B2 true JPH0377655B2 (en]) 1991-12-11

Family

ID=12636564

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57042456A Granted JPS58158915A (ja) 1982-03-16 1982-03-16 薄膜生成装置

Country Status (4)

Country Link
US (1) US4486461A (en])
EP (1) EP0089242B1 (en])
JP (1) JPS58158915A (en])
DE (1) DE3380265D1 (en])

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60191269A (ja) * 1984-03-13 1985-09-28 Sharp Corp 電子写真感光体製造装置
GB2213836B (en) * 1987-12-18 1992-08-26 Gen Electric Co Plc Vacuum deposition process
KR100297282B1 (ko) * 1993-08-11 2001-10-24 마쓰바 구니유키 열처리장치 및 열처리방법
US5514246A (en) * 1994-06-02 1996-05-07 Micron Technology, Inc. Plasma reactors and method of cleaning a plasma reactor
US5569363A (en) * 1994-10-25 1996-10-29 Sony Corporation Inductively coupled plasma sputter chamber with conductive material sputtering capabilities
US5643639A (en) * 1994-12-22 1997-07-01 Research Triangle Institute Plasma treatment method for treatment of a large-area work surface apparatus and methods
US5874014A (en) * 1995-06-07 1999-02-23 Berkeley Scholars, Inc. Durable plasma treatment apparatus and method
US6230719B1 (en) 1998-02-27 2001-05-15 Micron Technology, Inc. Apparatus for removing contaminants on electronic devices
US6350321B1 (en) * 1998-12-08 2002-02-26 International Business Machines Corporation UHV horizontal hot wall cluster CVD/growth design
US6291358B1 (en) 1999-10-15 2001-09-18 Micron Technology, Inc. Plasma deposition tool operating method
JP4676567B1 (ja) * 2010-07-20 2011-04-27 三井造船株式会社 半導体基板熱処理装置
US9548378B2 (en) * 2012-02-09 2017-01-17 GlobalFoundries, Inc. Epitaxial channel formation methods and structures
CN215925072U (zh) * 2020-09-24 2022-03-01 株式会社国际电气 基板处理装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4268538A (en) * 1977-03-09 1981-05-19 Atomel Corporation High-pressure, high-temperature gaseous chemical method for silicon oxidation
JPS5845177B2 (ja) * 1979-03-09 1983-10-07 富士通株式会社 半導体表面絶縁膜の形成法
JPS5846057B2 (ja) * 1979-03-19 1983-10-14 富士通株式会社 プラズマ処理方法
SE8004352L (sv) * 1979-06-14 1980-12-15 Atomic Energy Authority Uk Vermeoverforingselement och -system
US4401689A (en) * 1980-01-31 1983-08-30 Rca Corporation Radiation heated reactor process for chemical vapor deposition on substrates
JPS5710937A (en) * 1980-06-25 1982-01-20 Mitsubishi Electric Corp Plasma gaseous phase growth device
US4339645A (en) * 1980-07-03 1982-07-13 Rca Corporation RF Heating coil construction for stack of susceptors
JPS5724024A (en) * 1980-07-16 1982-02-08 Tdk Corp Magnetic recording medium

Also Published As

Publication number Publication date
US4486461A (en) 1984-12-04
DE3380265D1 (en) 1989-08-31
EP0089242A3 (en) 1985-05-22
EP0089242B1 (en) 1989-07-26
EP0089242A2 (en) 1983-09-21
JPS58158915A (ja) 1983-09-21

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